Abstract
We report the growth and polarization switching properties of epitaxial ferroelectric–superconducting heterostructure PbZr0.52Ti0.48O3 (PZT) (100 nm)/YBa2Cu3O7−δ (YBCO) (100 nm) thin films for non-volatile ferroelectric random access memory elements. The epitaxial nature of the heterostructure is verified using the reciprocal space mapping data with the superconducting phase transition temperature (Tc) of nearly 25 K far below the Tc of as-grown YBCO under the same condition. The significant remanent polarization (Pr) ∼ 45 µC/cm2 at 1 kHz can switch from one state to another using 1 μs pulse. The devices meet the basic criteria of memory elements, such as high resistance ∼10 GΩ at 8 V, a butterfly-like capacitance–voltage (C/V) loop, significant polarization, a sharp change in the displacement current, long-time charge retention, and small fatigue at room temperature.
Highlights
The epitaxial and strained PbZr0.52Ti0.48O3 (PZT) near the morphotropic phase boundary (MPB) has been extensively studied for non-volatile ferroelectric random access memory (NVFeRAM) elements and various other applications
We report the fabrication of the epitaxial PZT/YBCO/LAO heterostructure thin films, which shows large polarization in the 100 nm PZT thin film with superconducting properties of the YBCO electrode
PZT thin films were deposited at po2 ∼ 80 mT oxygen partial pressure and 650 ○C substrate temperatures with the laser repetition rate of 5 Hz
Summary
The epitaxial and strained PbZr0.52Ti0.48O3 (PZT) near the morphotropic phase boundary (MPB) has been extensively studied for non-volatile ferroelectric random access memory (NVFeRAM) elements and various other applications. We report the fabrication of the epitaxial PZT/YBCO/LAO heterostructure thin films, which shows large polarization in the 100 nm PZT thin film with superconducting properties of the YBCO electrode.
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