Enhanced ferroelectric and ferrimagnetism properties at room temperature in BaTiO3 doped GaFeO3 ceramics

Abstract

BaTiO3 doped GaFeO3 multiferroic ceramics were prepared by solid state sintering. The influence of BaTiO3 doping on the ferroelectric, ferrimagnetic and dielectric properties of GaFeO3 ceramics was systematically studied. The results show that 0.9GaFeO3-0.1BaTiO3 ceramics exhibit enhanced multiferroic behaviors compared with pure GaFeO3 ceramics. The residual polarization of 0.9GaFeO3-0.1BaTiO3 sample is increased from 0.05 μC/cm2 to 0.14 μC/cm2. The increase of magnetic transition temperature and remanent magnetization is attributed to the formation of BaFe12O19 phase. Our results show that 0.9GaFeO3-0.1BaTiO3 ceramics have potential applications in information storage and provide new possibilities for magnetoelectric applications.