Abstract
The customized substrates for manufacturing 300mm power semiconductors had to be prepared by deposition processes and epitaxial growth on standard substrates since they were not yet available from suppliers in both sufficient quality and quantity. Polysilicon films were deposited on wafer backsides and optimized regarding impurity gettering. Severe modifications of existing epitaxy reactors, the facilitation, and the infrastructure were prerequisite to develop extremely high doped, thick silicon layers with both supreme uniformity of layer thickness and dopant distribution to take full advantage of the productivity advantage of large diameter wafer processing. Simulation supporting these activities was also key to enable furnace processes with extremely tight temperature ranges. For the development of very thick, high resistivity silicon layers a 5-wafer 200mm batch tool was used to exploit the tool and process learning for the design and manufacturing of a similar 300mm batch tool. For pattern transfer the same advanced plasma etch equipment was mandatory to achieve similarly uniformities regarding etch rate, profile shape, and CD as in CD-driven advanced DRAMs and MPUs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
