Abstract

An all-inorganic Pb0.99Nb0.02(Zr0.85Sn0.13Ti0.02)0.98O3 (PNZST) antiferroelectric (AFE) thin film was designed to enhance its energy-storage performance by adjusting its orientation. Using a radio frequency (RF) magnetron sputtering technology, 450-nm-PNZST AFE films with (111), (110), and (100) crystal orientations were successfully prepared. All the films showed a dense microstructure and the highly preferred orientations were determined by the orientation of the bottom electrodes. Moreover, the preferred orientation of the AFE thin film had a great influence on the dielectric and energy-storage properties. Meanwhile, the energy storage density of the PNZST AFE thin film with the (100) orientation reached 33.7 J cm−3, which was 43 % higher than that of PNZST AFE thin film with a (111) orientation. All of these results shed light on how the energy-storage performance of PNZST AFE thin films can be enhanced and optimized by adjusting its orientation. This offers a new strategy and innovation, which opens up a route to practical applications in micro-energy-storage systems.

Highlights

  • With the rapid development of intelligent systems, people tend to live more portable, convenient, and intelligent lifestyles

  • Three typical X-Ray Diffraction (XRD) patterns of the PNZST films grown on LNO (100), LNO (110), and Pt (111) substrates were depicted in the Figure 2

  • It should be noted that the lattice index of the diffraction peak in the XRD pattern of the thin film was given based on the pseudo-cubic structure rather than the orthogonal structure [31]

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Summary

Introduction

With the rapid development of intelligent systems, people tend to live more portable, convenient, and intelligent lifestyles. With the development of these lifestyles, flexible, portable and efficient electronic products and capacitors have attracted more and more attention from researchers, companies and other people. Because of the discovery of PZ, Pb-based AFE materialst have been widely used in many fields, especially capacitors, sensors and so on [5,6,7,8,9,10]. Due to the development of PZ, many researches later focused on capacitive energy storage of PZbased antiferroelectric thin films. Among numerous AFEs, some polymer matrix composite (PMC) AFEs have many advantages, and because of their good energy storage densities and they have been widely studied and applied in the above fields [13,14,15,16,17]. It means that it is imperative to develop a kind of energy storage material

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