Abstract
A convenient and effective strategy of preparing the colorless and transparent Ce3+-doped aluminoborosilicate glass in air by high temperature melt-quenching method is revealed. It is easily achieved by the partial substitution of Si3N4 for SiO2 within 20–25 mol%. The optimized Ce3+-doped aluminoborosilicate glass scintillaor (y = 25%) is featured with a density of 4.6432 g/cm3 and a lifetime of 35.36 ns, respectively. Compared to the glass without any substitution of Si3N4 (y = 0%), both the photo- and radio-luminescence intensity of the optimized Ce3+-doped aluminoborosilicate glass (y = 25%) are enhanced by a factor of 11.05 and 10.58, respectively. The corresponding integrated raidoluminescence intensity is about 22.8% of that of BGO crystal irradiated by X-rays.
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