Abstract
Real-space transfer devices using strained In x Ga 1- x As ( x = 0.15, 0.25) channel layers and unstrained GaAs channel layers on GaAs substrates are fabricated with Pd/Ge ohmic contacts. The epitaxial structure is studied by transmission electron microscopy. Enhanced electron transfer and strong negative differential resistance are observed in strained InGaAs channel devices. The InGaAs channel devices also show lower leakage currents, higher electron transfer efficiency, and higher drain current peak-to-valley ratios.
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