Enhancement of electron transfer and negative differential resistance in GaAs-based real-space transfer devices by using strained InGaAs channel layers

Abstract

Real-space transfer devices using strained InxGa1−xAs (x=0.15, 0.25) channel and unstrained GaAs channel are fabricated. The electron transfer and negative differential resistance of InGaAs channel devices are enhanced. The InGaAs channel devices with a larger indium mole fraction show lower leakage currents and can be operated at a higher collector voltage. For operation in the negative resistance field-effect transistor mode, the drain current peak-to-valley ratios of strained InGaAs channel devices are larger than that of unstrained GaAs channel devices. The peak-to-valley ratio can be increased more than two orders of magnitude by using strained InGaAs channel layers.