Abstract
The enhancement of electron injection into silicon dioxide layers using a metal-granular metal film-SiO2-silicon structure is reported for Al, Ni, and Mo-SiO2 cermets. This enhancement was found to be stronger for higher metal to oxide ratios. The I-V characteristic curves for these structures follow the Fowler-Nordheim tunneling mechanism behavior, indicating that the dominant effect is an enhancement of the electric field near the granular film-SiO2 interface.
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