Abstract
Electro-optic properties of self assembled InGaAs quantum posts have been studied experimentally. For TE polarization phase modulation enhancement up to 27% over devices containing InGaAs quantum well of the same average composition and thickness was observed indicating significant electro-optic coefficient increase in quantum posts. The measured linear and quadratic electro-optic coefficients of the quantum posts were as high as 17.8 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-12</sup> m/V and 49.4 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-21</sup> m <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 1500 nm which are more than an order of magnitude larger than those of GaAs.
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