Abstract
Electrical properties of transparent conductive ZnO:B films, obtained by the low-pressure metal organic chemical vapor deposition (LP-MOCVD) technique, were monitored during the given time, and a heavy worsening of these properties was observed. At the same time, other ZnO:B samples subjected to a post-deposition treatment by argon plasma etching showed an appreciable enhancement of the electrical stability in the given time. A degradation mechanism, involving formation of O– adsorbate and its diffusion inside the grain boundary, is proposed as responsible of the carrier mobility worsening. Furthermore, the beneficial effect of the plasma treatment is explained in terms of a rearrangement of the grain boundary with a decrease of positively charged defect density and, consequently, a slowing down of O– formation rate. Finally, argon plasma post-deposition treatment is proposed as an effective process for obtaining ZnO:B films with an appreciable electrical stability in the given time.
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