Abstract
To enhance the solution-processed thin-film transistor (TFT) performance, we proposed a TFT with self-passivated multistacked active layers (SP-MSALs). This structure exhibited self-protection in the active layer as compared with the conventional TFT structure. The self-passivation layer prevented the leakage current path at the back-channel region, thus improving the field-effect mobility (μFET) and the positive bias stress (PBS) reliability. In addition, it was very stable in the exposed environment even for 150 h. As a result, the proposed SP-MSAL TFT caused the threshold voltage shift (ΔVTH) under PBS to improve from 8.2 to 4.2 V as compared with the conventional MSAL TFTs.
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