Abstract
0·7Na0·5Bi0·5TiO3–0·3Bi(Fe0·95Mn0·05)O3 (NBT–BFOMn) and (Na0·5Bi0·5)TiO3 (NBT) thin films were fabricated on LaNiO3(l 00)/Si substrate by metal organic decomposition. Both films crystallise into the single perovskite structures with strong (l 00) diffraction peaks. The leakage current of NBT–BFOMn can be suppressed due to the decrease in the content for oxygen vacancies and the formation of defect complexes. Compared with the round shaped polarisation–electric field loop for pure NBT, much improved ferroelectric property with a remnent polarisation Pr of 28 μC cm−2 and coercive field Ec of 152 kV cm−1 at 630 kV cm−1 has been obtained for NBT–BFOMn thin film. In addition, the higher change of relative dielectric content ϵr variation versus voltage indicates the enhancement in the ferroelectric nature of NBT–BFOMn thin film. The ϵr and dissipation factor tanδ on frequency for NBT–BFOMn show small dispersion tendency with ϵr of 370 and tanδ of 0·167 at 100 kHz.
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