Abstract
To fabricate a performance-enhanced Schottky barrier diode (SBD) on a diamond, a cerium hexaboride (CeB6) interfacial layer was introduced between the diamond and the Zr/Au electrode. The inserted CeB6 layer was characterized using X-ray photoelectron spectroscopy. Introducing the CeB6 layer significantly improved the performance of the diamond SBD compared with a sample without the layer. The ideality factor (n)/SBH (ΦB) values of the SBD with and without the CeB6 interlayer were 2.24/1.92 eV and 2.82/1.65 eV, representing an improvement of 20.5% and 16.4% for the ideality factor and Schottky barrier height, respectively. The reverse breakdown voltage increased from −86 to −110.5 V, indicating an improvement of 28.5% for breakdown voltage. Additionally, the reverse current of the SBD with CeB6 was suppressed, making it more reliable and stable than that without CeB6 before the breakdown threshold. The carrier concentration and depletion layer width were increased from 1.135 × 1014 cm−3 and 206.7 nm to 2.646 × 1014 cm−3 and 227.6 nm, respectively, with the introduction of CeB6. These results demonstrate the advantages of inserting of CeB6 in vertical diamond SBDs and show the potential of SBDs for future power rectifiers.
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