Abstract
Cu(In,Ga)Se 2 (CIGS) polycrystalline thin-film solar cells with an area of 0.25 cm2 were prepared by a three-stage co-evaporation method. By applying Zn 0.8 Mg 0.2 O secondary buffer layer, we obtained CIGS solar cells with an efficiency of 13.97% with only 20 nm CdS first buffer layer. The thickness of CdS buffer layer was greatly reduced by applying Zn 0.8 Mg 0.2 O secondary buffer layer. The Zn 0.8 Mg 0.2 O buffer layer reduced the optical loss and interface recombination, leasing to the enhanced performance of CIGS solar cells.
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