Abstract
A non-c-oriented SrBi2Ta2O9 thin film was fabricated by eclipse pulsed laser deposition. It showed improved ferroelectric properties as well as enhanced domain wall speed. The enhanced domain wall speed directly indicates that the non-c-oriented domain has a lower activation field in terms of Merz's law than the highly c-oriented domain. The non-c-oriented domains of the low activation field give easier domain switching with the fast domain wall speeds than the c-oriented domains.
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