Abstract

Via the sol–gel process, compositionally graded and homogeneous BaZr x Ti 1 − x O 3 (BZT) thin films were grown on (100)-oriented LaNiO 3 (LNO)/Si substrates, respectively. The compositionally graded BZT thin film consisted of BaZr 0.05Ti 0.95O 3 (BZT5), BaZr 0.10Ti 0.90O 3 (BZT10) and BaZr 0.15Ti 0.85O 3 (BZT15). Homogeneous thin films of above three compositions were fabricated for comparison. X-ray diffraction measurements show all the BZT thin films exhibit a single perovskite phase with highly (100)-preferred orientation. The temperature-dependent dielectric properties of these films show typical diffuse phase transition, and the phase transition temperature are all lower than −35 °C. A prominent increase of the dielectric constant and a more aligned surface morphology is observed in the compositionally graded thin film compared to the homogeneous samples.

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