ANALYSIS CRYSTAL STRUCTURE OF THIN FILMS BaZr 0.2 Ti 0.8 O 3 WHICH HAVE DEPOSITED BY SOL GEL METHOD

Abstract

Fabrication of BaZr 0.2 Ti 0.8 O 3 thin film on Si substrate by sol gel method use spin coater has been done successfully. Bariumasetat, zirconiumisoproponol, titaniumisopropoksid were used as deposition components BZT thin film. Asetat acid and etylen glycol were used as solvent. There are three basic principles of thin film fabrication by sol gel method, i.e. chemical process (Solvent fabrication), thin film deposition use spin coater, and thermal process (annealing). The layers number variation has done to get layer which become target in this research. Speed and duration of spin coater rotation were set at 3000 rpm for 30 seconds, while annealing temperature and duration were set in 8000 °C for 3 hours. Characterization that we have done i.e. X-Ray Flurosence (XRF) test to observe the composition of thin film BZT and X-Ray Diffraction (XRD) test to observe crystal structure. The XRF characterization results show that deposition components of BZT thin film have deposited on Si substrate. The implication of more layers number which have formed is more components BZT thin film which have deposited. The XRD characterizations results show that crystality of BZT thin film because raise some peaks which have been cross check by ICDD database and conclude that the owner of some peaks is BZT. The conclusions have strength by smoothing results by General StuctureAnalysis System (GSAS) software. The implication ofmore layers number is more high intensity on certain oriented plane. Keywods: Sol gel, BZT, XRD, XRF, GSAS.