Enhanced dielectric and electrical properties of PbS nanostructures facilely synthesized by low-cost chemical route: An effect of Ce doping concentrations

Abstract

Herein the authors are presenting the facile preparation and characterization of Ce doped PbS nanostructures (Ce@PbS NSs). Phase analysis was studied by X-ray diffraction which approves major cubic phase of PbS along with CeClS phase peaks. Vibrational analysis also confirm major cubic phase of PbS of the final products. EDX/SEM e-mapping showed the Ce doping with homogeneity in PbS. SEM analysis gives a clear morphology of nanoparticles along with some nanoflakes in respective pure and doped PbS. Optical study reveals the variation in energy gap values of PbS with Ce content from 1.45 eV (pure PbS) to 1.084 eV (2.5 wt% Ce@PbS) and also there is another energy gap varies between 3 and 3.5 eV in pure and doped PbS NSs. The capacitance and impedance were studied over wide frequency region. The dielectric constant of PbS has been improved from 17.5 to 24.5 with Ce content addition. The ac electrical conductivity was improved with Ce content addition in PbS. The improvement in dc-electrical conductivity was also noticed with Ce addition in PbS. The improved dielectric and electrical characteristics makes the synthesized Ce@PbS NSs useful in optoelectronic.