Abstract
The structural and electrical properties of epitaxial Pb(Zr0.2Ti0.8)O3 thin films grown on 2 in. (001) silicon wafers were investigated. Using x-ray diffraction, the lattice behavior of the heterostructure has been studied as a function of temperature, suggesting a 250 °C increase of the Pb(Zr0.2Ti0.8)O3 ferroelectric-paraelectric transition temperature with respect to the bulk value. This significant enhancement of the critical temperature is understood in terms of a two-dimensional clamping effect.
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