Abstract
AbstractIntrinsically high attenuation of X‐rays and excellent optoelectronic properties endow Cs3Bi2I9 with great promise for high‐performance X‐ray detectors. However, preparation of high quality Cs3Bi2I9 single crystal with large area and millimeter‐thick remains challenging and time‐consuming. A size scalable growth technology, a mechanical sintering process, which is applicable for the integration in image detectors is proposed in this work. Compared with the Cs3Bi2I9 wafer, the Cs3Bi2I9/MXene composite wafer exhibits higher carrier transfer efficiency and mobility‐lifetime product through incorporation of Ti3C2Tx MXene multilayer nanoflakes (MXene nanoflakes). The Cs3Bi2I9/MXene composite wafer X‐ray detector shows an excellent linearity of X‐ray response, a fast response speed, and a low limit of detection of 231 nGyair s−1. The sensitivity of 368 µC Gyair−1 cm−2 under 120 V mm−1 is achieved, which is 15.4% enhanced over the Cs3Bi2I9 wafer detector. The sensitivity of Cs3Bi2I9/MXene wafer device enhances ≈20–40% at low applied voltage regime. In addition, the Cs3Bi2I9/MXene wafer detector exhibits excellent operational stability after storage for 12 months in ambient air. This work provides an alternative approach for realization of next‐generation high‐performance perovskite X‐ray detectors.
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