Abstract
Based on an extensive two-dimensional process and device simulation studies, a new n/sup +/-p-n-n/sup +/ vertical submicrometer bipolar junction transistor with a three-zone step doped lateral collector (VSLC) structure is presented. It is demonstrated for the first time that the breakdown voltage of the thin-film (<0.5 /spl mu/m) bipolar transistors can be enhanced significantly by using a combination of a vertical thin base and the VSLC structure. The proposed VSLC structure exhibits: 1) excellent output characteristics; 2) diminished quasi-saturation; 3) improved reliability against self-heating effect; and 4) enhanced breakdown voltage as high as 60% more than that of the conventional thin-film lateral bipolar transistor (LBT) on silicon-on-insulator. It also obviates the difficulties associated with the formation of a thin base in LBTs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Device and Materials Reliability
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
