Abstract

The electrical and optical characteristics of a 370 nm AlGaN light-emitting diode device based on a microring-array geometry are presented. By structuring the light emission area into an interconnected array of micro-scale rings, the directed light extraction efficiency is enhanced, and current spreading in the n-type cladding layers is improved. A reduction of differential series resistance is observed, and the device saturates at a higher current as the carriers are injected efficiently and uniformly across the junction areas. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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