Abstract
A semiconductor laser diode having high indium composition ratio and light-emitting property is provided to reduce the deterioration of crystal according to low temperature by minimizing heat damage of high indium composition ratio. A semiconductor laser diode(100) comprises a substrate(101), an n-type clad layer(102), an active layer(104) and a p-type cladding layer(106). A transparent electrode layer(107) is formed on the ridge structure of the p-type cladding layer. N-type and P-contacts are formed in the lower-part of substrate and upper side of the transparent electrode layer. An insulating layer(108) covering the ridge structure and transparent electrode layer is formed on the p-type cladding layer. N-type and p-type cladding layer corresponds to the respective top clad layer.
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