Abstract
We study spontaneous emission control in a buried-heterostructure (BH) photonic crystal (PhC) cavity in which InGaAsP quantum wells (QWs) are embedded in an InP PhC. Spontaneous emission from QW-PhC cavities have been extensively investigated, but they suffer from poor carrier confinement and surface non-radiative recombination. Therefore, the clear spontaneous emission control has been only observed in quantum dots PhC cavities. The present study shows that the BH-QW-PhC cavities can exhibit distinctive spontaneous emission control in QW-PhCs. We observed large emission-rate ratio between the on- and off-resonant conditions of 30:1. This is the highest ratio reported for QW-PhCs.
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