Enhanced analog/RF performance of hybrid charge plasma based junctionless C-FinFET amplifiers at 10 nm technology node

Abstract

We report a novel hybrid complementary metal-oxide semiconductor (CMOS) amplifier (H-CA) combining charge plasma based junctionless (CP) n-FinFET and conventional junctionless (JL) p-FinFET and compare its analog/RF performance with JL FinFETs at 10-nm technology node. The CP FinFETs are found to exhibit improved unity gain cut-off frequency (FT) and transconductance frequency product (TFP) compared to JL FinFETs. To evaluate the performance improvement of hybrid CMOS amplifier we compare three different amplifiers, in terms of voltage gain and gain band-width. Our investigations reveal that the voltage gain of the proposed H-CA exhibits significant improvement of ∼40.02%, relative to its equally sized JL-CA value, at VBias = supply voltage (VDD)/2. Moreover, the GBW of the H-CA exhibits ∼41.67% enhancement evaluated at VBias = VDD/2 alongside showing better stability to variation in bias voltage compared to its JL counterpart. Thus CP based nanoscale CMOS amplifiers could be used for future high performance analog/RF applications.