Abstract
To realize the high efficiency potential of perovskite/chalcopyrite tandem solar cells in modules, hydrogenated In2O3 (IO:H) as electrode is investigated. IO:H with an electron mobility of 100 cm2 V−1 s−1 is demonstrated. Compared to the conventional Sn doped In2O3 (ITO), IO:H exhibits a decreased electron concentration and leads to almost no sub-bandgap absorption up to the wavelength of 1200 nm. Without a trade-off between transparency and lateral resistance in the IO:H electrode, the tandem cell keeps increasing in efficiency as the IO:H thickness increases and efficiencies above 22% are calculated. In contrast, the cells with ITO as electrode perform much worse due to the severe parasitic absorption in ITO. This indicates that IO:H has the potential to lead to high efficiencies, which is otherwise constrained by the parasitic absorption in conventional transparent conductive oxide electrode for tandem solar cells in modules.
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