Enhanced absorbance of a strained nanoscale Si-layered system

Abstract

Si modifications implemented at the nanoscale lead to optoelectronic and photovoltaic effects that can widen applications of conventional Si devices. The investigation exploits charge carrier and photon flux transformations at a so-called carrier collection limit. Comparison of the collection efficiencies of the same sample with and without a buried nanosystem allows a better understanding of the optical (absorbance) and electronic (carrier collection) behaviors. Experimental evidence for enhanced absorbance of a strained nanoscale Si-layered system has been found.