Abstract
We present the structural, interface, surface morphological and transport characteristics of La0.7Sr0.3MnO3 (LSMO) thin film on Si (001) substrate. X-ray reflectivity of the La0.7Sr0.3MnO3 thin film confirms the presence of silicon oxide at the interface and a dead layer below the LSMO film layer. Reflectivity data also supports the granular growth of La0.7Sr0.3MnO3 islands, causing voids on the La0.7Sr0.3MnO3 film surface as observed from atomic force microscopy studies. From current-voltage measurements, Shottky behaviour is observed for La0.7Sr0.3MnO3 on Si (001) substrate. In comparison to La0.7Sr0.3MnO3 film on Si (001), normal p-n junction behaviour is observed when SnO2 is introduced in between La0.7Sr0.3MnO3 layer and Si (001) substrate. Observed transport properties of La0.7Sr0.3MnO3 on Si are discussed phenomenologically in the presence of intermediate layers.
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