English

Abstract

Memories are a core part of most of the electronic systems. Performance in terms of speed and power dissipation is the major areas of concern in today’s memory technology. In this paper SRAM cells based on 6T, 7T, 8T, and 9T configurations are compared on the basis of performance for read and write operations. Studied results show that the power dissipation in 7T SRAM cell is least among other configurations because this structure uses a single bit for both read and write operations. This SRAM cell also provides the least power delay product among different studied SRAM configurations. Performance in terms of power dissipation and power delay product are least for 7T SRAM cell among the other SRAM configurations in 90nm CMOS technology.