Abstract
The authors demonstrate the ability to create an ultrafast hyperbolic momentum state using metallic InAsSb alloys embedded within dielectric GaSb and explore the possibility of transient modification of metamaterials to control the optical properties of photon emission. Properly engineered quantum well structures were grown by molecular beam epitaxy and Si-doped in order to convert the InAsSb layers from dielectric to metallic at infrared frequencies. The carrier excitation scheme of the engineered hyperbolic stacks was investigated in a variety of excitation levels using pump–probe measurements. The photo-excited carriers in the structure with a metal fraction of ∼0.5 showed a polarization dependent reflectivity change, which indicates a transient hyperbolic metamaterial state in the heterostructure induced by the pump laser.
Highlights
Integrated nano-optical devices are at the forefront of photonic research because the successful implementation of plasmonic resonances and near-field coupling at infrared (IR) frequencies would benefit a variety of applications in quantum navigational sensing, quantum key distribution, quantum networks, and quantum computing.1–4 Application areas in many of these technologies will rely in some manner on single photon sources
Hyperbolic metamaterials (HMMs), composed of metallic building blocks embedded in dielectric media, control photon emission lifetime by modifying the photon density of states (PDOS)
The study was designed to examine the controllability of the hyperbolic state by tuning metal fractions in the IR spectral range
Summary
Integrated nano-optical devices are at the forefront of photonic research because the successful implementation of plasmonic resonances and near-field coupling at infrared (IR) frequencies would benefit a variety of applications in quantum navigational sensing, quantum key distribution, quantum networks, and quantum computing. Application areas in many of these technologies will rely in some manner on single photon sources. Hyperbolic metamaterials (HMMs), composed of metallic building blocks embedded in dielectric media, control photon emission lifetime by modifying the photon density of states (PDOS).. Antimony (Sb)-based semiconductor HMMs (SHMMs) offer a route to control these resonances, in the IR wavelength range of ∼3–30 μm, which would modulate photon emission lifetime. Our main focus in this effort is to engineer InAsSb-based hyperbolic resonators to study the spectral response of photo-induced carriers. This study will help to comprehend the carrier excitation scheme and to engineer their properties to be applicable for the IR wavelength range. Our study will help to establish a new platform for deterministic single photon emission that can be integrated into opto-electronic platforms and dramatically advance optical quantum technologies.
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