Abstract
A new approach to SiGe island ordering on mechanically responsive silicon nanomembranes (SiNMs) is examined using mechanics modeling. Double-sided deposition on freestanding substrates results in ordered islands on both surfaces. This ordering occurs because the extreme thinness of the SiNM allows islands on one surface to create significant strain fields, which guide the nucleation of subsequent islands, on the opposite surface. The locations of nucleation sites predicted by the modeling agree with experimental observations of SiGe islands grown on silicon nanomembranes. The modeling shows that the island location and the strength of ordering can be controlled by manipulating the thickness of the membrane.
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