Abstract
Freestanding, ultracompliant crystalline-sheet substrates provide a new opportunity to control the growth of strained epitaxial films. Three-dimensional SiGe islands grown on thin silicon nanomembranes self-order as the strain field induced by initial island growth guides nucleation of subsequent islands on the opposite surface. A mechanics analysis explains this unique growth mode, possible only on ultracompliant substrates. The ordering can be tailored by manipulating the thickness and elastic properties of the membrane.
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