Abstract
We identified through numerical simulations the optimal condition to have a deterministic switching regime assisted by Voltage Controlled Magnetic Anisotropy (VCMA). To minimize the write energy required to reach this regime, we measure the VCMA coefficient ξ on perpendicular magnetic tunnel junctions (pMTJ) with high resistance-area product (RA) and varying thicknesses of the FeCoB storage layer and the naturally oxidized tunnel barrier. The VCMA coefficient is higher as the effective anisotropy decreases, which is the case for larger Mg and FeCoB thicknesses. The temperature dependence of ξ was shown to increase from room temperature to 5K, showing values up to 35 fJ/Vm at 10K.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
