Abstract

Charge transport in amorphous organic semiconductors is governed by carriers hopping between localized states with small spin diffusion length. Furthermore, the interfacial resistance of organic spin valves (OSVs) is poorly controlled resulting in controversial reports of the magnetoresistance (MR) response. Here, surface‐initiated Kumada transfer polycondensation is used to covalently graft π‐conjugated poly(3‐methylthiophene) brushes from the La0.67Sr0.33MnO3 (LSMO) bottom electrode. The covalent attachment along with the brush morphology allows control over the LSMO/brush interfacial resistance and large spacer mobility. Remarkably, with 15 nm brush spacer layer, an optimum MR effect of 70% at cryogenic temperatures and a MR of 2.7% at 280 K are observed. The temperature dependence of the MR is nearly an order of magnitude weaker than that found in control OSVs made from spin‐coated poly(3‐hexylthiophene). Using a variety of different brush layer thicknesses, the thickness‐dependent MR at 20 K is investigated. A spin diffusion length of 17 nm at −5 mV junction voltage rapidly increased to 48.4 nm at −260 mV.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.