Abstract
Double-barrier fully epitaxial crystalline magnetic tunnel junctions employing a class of artificial antiferromagnetic (AAF) subsystem are elaborated by molecular-beam epitaxy. Our specific AAF subsystem is constituted by an Fe(10nm)∕MgO(0.7nm)∕Fe(20nm) trilayer stack where the antiferromagnetic coupling between the two Fe layers occurs by spin-polarized tunneling of electrons across the three, atomic-layer thin MgO insulating barrier. In our junctions, the efficiency of spin filtering is validated by the tunnel magnetoresistance effects of about 140% at room temperature and a high output voltage up to 500 mV at 1.3 V.
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