Abstract
We demonstrate an effective approach to enhancing the performance of III-nitride-based photoelectrode by utilization of hot electrons generated from localized surface plasmons (LSPs). The device designed as a TiO2 / Au / InGaN sandwich structure is fabricated by cladding Au nanodroplets with a thin TiO2 layer to provide a large interfacial layer, which is beneficial for the hot electron collection efficiency by electron reflection via an additional energy barrier. The applied bias photo-to-current efficiency is enhanced by up to four times due to the contribution of hot electrons generated from the absorbed light with wavelengths >470 nm, corresponding to photon energies below the band gap of InGaN (2.67 eV) recognized from incident photon-to-current efficiency spectrum. The LSPs of our photoelectrodes also exhibit a suppressed size-dependence on the metal nanodroplets, feasible for mass production.
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