Abstract
We demonstrate engineering of carrier states in the conduction band (CB) and valence band (VB) of site-controlled InGaAs/GaAs quantum dots (QDs) grown into pyramidal recesses, by controlling their shape, size, and composition. QDs with CB level separation ranging from ∼15 to 70 meV are obtained, useful in applications based on intraband transitions, e.g., QD photodetectors and QD cascade lasers. Moreover, by varying the aspect ratio and composition of the QDs we are able to switch the polarization of the dominant interband transition, a feature of interest for producing single photon emitters and QD amplifiers with prescribed polarization states
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
