Abstract
Color centers in diamond, as single photon emitters, are leading candidates for future quantum devices due to their room temperature operation and photostability. The recently discovered chromium-related centers are particularly attractive because they possess narrow bandwidth emission and a very short lifetime. In this paper, we investigate the fabrication methodologies for engineering these centers in monolithic diamond. We show that the emitters can be successfully fabricated by ion implantation of chromium in conjunction with oxygen or sulfur. Furthermore, our results indicate that the background nitrogen concentration is an important parameter, which governs the probability of success in generating these centers.
Highlights
Developing novel solid state systems which can generate single photons on demand at room temperature is a recognized goal in the quantum information science community [1, 2]
The optical properties of this center are limited by a strong phonon coupling, resulting in a broad emission (~100 nm) of which only 4% is concentrated in the zero phonon line (ZPL)
Nickel and silicon related emitters have been studied as plausible candidates since some of the centers show narrow emission lines in the near infra-red (NIR)[811]
Summary
Developing novel solid state systems which can generate single photons on demand at room temperature is a recognized goal in the quantum information science community [1, 2]. In this paper we investigate the role of co-dopants such as nitrogen and oxygen, on the formation of chromium centers in diamond by ion implantation techniques. We perform a range of coimplantations of various impurities together with Cr ions, to determine their effect on the formation of the centers at the single emitter level having superior optical properties as described in [15].
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