Energy Response of Silicon Drift Detectors for Kaonic Atom Precision Measurements

Marco Miliucci,Mihail Iliescu,Carlo Fiorini,Massimiliano Bazzi,Alessandro Scordo,Florin Sirghi,Catalina Curceanu,Aidin Amirkhani,Johann Zmeskal

doi:10.3390/condmat4010031

Abstract

Novel, large-area silicon drift detectors (SDDs) have been developed to perform precision measurements of kaonic atom X-ray spectroscopy, for the study the K ¯ N strong interaction in the low-energy regime. These devices have special geometries, field configurations and read-out electronics, resulting in excellent performances in terms of linearity, stability and energy resolution. In this work the SDDs energy response in the energy region between 4000 eV and 12,000 eV is reported, revealing a stable linear response within 1 eV and good energy resolution.

Highlights

The main advantage of semiconductor X-ray detectors is the much lower energy required to create electron-hole pairs with respect to a gas detector, giving a greater number of charge carriers produced and, a better energy resolution
A silicon drift detector (SDD) consists of a double sided fully depleted silicon wafer with a cylindrical shape [1,2,3] where the n− bulk is sided by a p+ concentric ring strips and p+ non-structured layer which forms the radiation entrance window
Since the anode capacitance is independent from the active area [4], these detectors can be built with a large active area

Summary

Introduction

The main advantage of semiconductor X-ray detectors is the much lower energy required to create electron-hole pairs with respect to a gas detector, giving a greater number of charge carriers produced and, a better energy resolution. The radial drift field focuses the electrons produced by the absorbed radiation to the n+ small anode placed in the centre of the p+ strips side. The small value of the anode capacitance increases the amplitude of the output signal, giving good energy resolution and low noise in the subsequent electronic components in high-count rate measurements. Since the anode capacitance is independent from the active area [4], these detectors can be built with a large active area. Thanks to their reduced thickness, they can handle background events caused by high-energy particles still maintaining almost 100% efficiency for 8 keV X-rays

Methods

Results

Conclusion