Abstract
AbstractExcitation transfer in semiconductor nanostructure is an elemental process of next generation optoelectronic devices. Energy relaxation process in exciton transfer from the lowest state of a quantum well to the lowest state of the next well was studied. The energy relaxation process is essential for the completion of the transfer. Longitudinal optical (LO) phonon assisted energy relaxation was found to be most effective for exciton injection into the lowest state of very thin quantum wells on the basis of PLE measurements. A three‐quantum‐well structure including a 0.6‐nm thick (Zn, Cd, Mn)Se well and a 1.2‐nm thick (Zn, Cd)Se well separated by a 15‐nm ZnSe barrier was prepared. Energy difference of exciton in the two wells was close to the LO phonon energy. The exciton transfer efficiency between the two wells was measured as a function of external magnetic field. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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