Abstract
The dependence of the energy of the relative electron-hole motion in an exciton on the magnitude of applied electric field for various thicknesses of an ideal flat semiconductor plate is theoretically calculated. It is shown that the variation of the plate thickness significantly affects the dependence of the energy on the electric field. The effect should be observed in plates whose thickness exceeds the Bohr exciton radius by two orders of magnitude. Keywords: exciton, electrick field, thick plate.
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