Abstract
We have shown that for quantum wells placed close to the stress-free surface of the semiconductor heterostructure, the energy relaxation rate of two-dimensional electrons interacting with acoustic phonons at low temperatures (Bloch–Grüneisen regime) is changed considerably in comparison with that of a two-dimensional electron gas placed in a bulk of semiconductor. The relaxation rate is enhanced in the case of a semiconductor–vacuum system and is suppressed in the case of the surface covered by a thin metal film. The enhanced energy loss is caused by additional scattering at localized and reflected acoustic waves, and the decrease appears due to suppression of piezoelectric scattering in the vicinity of the metal.
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