Energy loss of H+ and He+ in the semiconductors GaAs, ZnSe, InP and SiC

Abstract

We have theoretically studied the electronic stopping cross section and the energy loss straggling of swift light ions (H+ and He+) moving through several compound semiconductors (GaAs, ZnSe, InP and SiC) as a function of the incident projectile energy. The calculations have been done using the dielectric formalism, in which the electronic structure of the projectile is described by the modified Brandt–Kitagawa model and the energy loss function (ELF) of the semiconductors is obtained using a linear combination of Mermin-type ELF to describe the outer electron excitations and generalized oscillator strengths to take into account the excitations of the inner-shell electrons. The different charge states that the projectile can acquire during its travel through the solid, as a result of electronic capture and loss processes, has been also considered. The contributions to the projectile energy loss from both the outer- and the inner-shell electron excitations are analyzed. The comparison of our calculated stopping cross sections with available experimental data shows a good agreement in a wide range of incident projectile energies.