Abstract
Deep level transient spectroscopy measurements were performed on Zn-doped Si1—xGex with x between 0 and 0.48. Our investigations reveal two deep hole traps which are attributed to the acceptor states Zn0/− and Zn−/—2 of substitutional Zn. Taking into account band-offset data for Si1—xGex, we have found that the energy level related to Zn0/− is horizontally aligned across the composition-dependent bandgap for x up to ≈︂30 at% Ge which gives evidence for a localized defect state in this composition range. For higher Ge concentrations the data suggest a continuous change-over to a shallow level center. The defect level related to the second hole trap decreases with increasing Ge content.
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