Abstract
A transient capacitance study of antimony-doped bulk GaAs has led to the identification of two energy levels related to the SbGa heteroantisite defect. The levels with electron emission activation energies of 0.54 and 0.70 eV are typically overshadowed by omnipresent EL3 and EL2 traps related to oxygen defect and the arsenic antisite, respectively. Positive identification of the levels, and determination of their emission rate signatures, was made possible employing GaAs crystals with a defect structure especially engineered to achieve very low concentrations of background traps. Relationship of the levels to the SbGa defect is deduced from excellent agreement with previous electron paramagnetic resonance results.
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