Abstract
Energy levels of nitrogen isoelectronic impurities in AlxGa1−xAs doped with 1018 N cm−3 by ion implantation were determined from the photoluminescence measurements at 2 °K. Three bound states associated with nitrogen impurities are situated below the X1 conduction-band minima and the binding energies of the excitons bound to the states decrease with increasing composition ratio x.
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