Abstract
The effect of a spatially dependent effective mass on the energy levels in a rectangular quantum wire with finite barrier potential is considered. The heterojunction is modelled by an error function rather than a step function to more accurately model the material transition region at the interface between the two materials. The carrier ground state is calculated using the envelope function approximation for Ga0.47In0.53As/InP and GaAs/Ga0.63Al0.37As systems. The results are lower than those reported before, and are in better agreement with the experimental points.
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