Abstract
Sputter deposited thin film AlN:Er (1at.%) emits at 554nm and 561nm as a result of 2H11/2→4I15/2 and 4S3/2→4I15/2 transitions under 532nm NdYAG laser and 783.3nm crystal laser excitation. An external magnetic field of 0.1T enhances the green emission and splits the 4S3/2 energy level in two sub-levels with a difference of 0.013eV. The splitting of energy level produces new emission from Er3+ with a wavelength of 564.5nm. Infrared emission is also observed at 1552nm as a result of 4I13/2→4I15/2 transition. Enhanced luminescence shows the suitability of Er3+ for high efficiency optical devices.
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