Energy for Electron-Hole Pair Generation in Silicon by Electrons andαParticles

Abstract

The difference of response of Si semiconductor detectors to $\ensuremath{\alpha}$ particles and electrons has been tested. The mean energy required for electron-hole pair generation by electrons has been found to be different from that for $\ensuremath{\alpha}$ particles. These values are, respectively, ${\ensuremath{\epsilon}}_{\ensuremath{\infty}}=3.79\ifmmode\pm\else\textpm\fi{}0.01$ and ${\ensuremath{\epsilon}}_{\ensuremath{\infty}}=3.61\ifmmode\pm\else\textpm\fi{}0.01$ at a temperature of 300\ifmmode^\circ\else\textdegree\fi{}K for electrons (365 KeV) and $\ensuremath{\alpha}'\mathrm{s}$ (5.477 MeV).