Abstract
This paper presents a novel design for a double-edge triggered flip-flop (DETFF). A detailed analysis of the transistors used in the DETFF is carried out to determine the critical path. Therefore, the proposed DETFF employs low-V th transistors at critical paths such that the power-delay product as well as the large area consumption caused by the low-V th transistors can be resolved simultaneously. Therefore, the proposed DETFF fully utilizes the multi-V th scheme provided by advanced CMOS processes without suffering from a large area penalty, slow clock frequency, and poor noise immunity. The proposed design is implemented using a typical 0.18-μm 1P6M CMOS process. The measurement results reveal that the proposed DETFF reduce the power-delay product by at lease 25% (i.e., dissipated energy).
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